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TK12E80W,S1X

TK12E80W,S1X

Part NumberTK12E80W,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 800V 11.5A TO220

DatasheetTK12E80W

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220

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TK12E80W,S1X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK12E80W
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 300V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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TK12E80W,S1X - Tags

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