STY60NM60
STY60NM60
Part Number STY60NM60 Description MOSFET N-CH 600V 60A MAX247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 60A (Tc) 560W (Tc) Through Hole MAX247™
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STY60NM60 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STY60NM60 Standard Package 30 Manufacturer STMicroelectronics Series MDmesh™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 266nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3
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