TK10E60W,S1VX
TK10E60W,S1VX
Part Number TK10E60W,S1VX Description MOSFET N CH 600V 9.7A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 9.7A (Ta) 100W (Tc) Through Hole TO-220
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TK10E60W,S1VX - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK10E60W Standard Package 50 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id 3.7V @ 500µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V FET Feature Super Junction Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
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