TK10E60W,S1VX
TK10E60W,S1VX
Part Number TK10E60W,S1VX
Description MOSFET N CH 600V 9.7A TO-220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 9.7A (Ta) 100W (Tc) Through Hole TO-220
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TK10E60W,S1VX - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK10E60W
Standard Package 50
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V
FET Feature Super Junction
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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