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TK040N65Z,S1F

TK040N65Z,S1F

Part NumberTK040N65Z,S1F

ManufacturerToshiba Semiconductor and Storage

DescriptionPB-F POWER MOSFET TRANSISTOR TO-

DatasheetTK040N65Z Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247

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TK040N65Z,S1F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK040N65Z Datasheet
Standard Package	30
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	57A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id	4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6250pF @ 300V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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TK040N65Z,S1F - Tags

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