Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ1464EEH-T1_GE3

SQ1464EEH-T1_GE3

SQ1464EEH-T1_GE3

Part NumberSQ1464EEH-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V SC-70

DatasheetSQ1464EEH

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 440mA (Tc) 430mW (Tc) Surface Mount SC-70-6

To learn about the specification of SQ1464EEH-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ1464EEH-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ1464EEH-T1_GE3.
We are offering SQ1464EEH-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ1464EEH-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ1464EEH
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	440mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V
Rds On (Max) @ Id, Vgs	1.41Ohm @ 2A, 1.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
FET Feature	-
Power Dissipation (Max)	430mW (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-6
Package / Case	6-TSSOP, SC-88, SOT-363

SQ1464EEH-T1_GE3 - Related Products

	DMN3065LW-13	Diodes Incorporated, N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323,	View
	SIRA36DP-T1-GE3	Vishay Siliconix, N-Channel 30V 40A (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IPU95R3K7P7AKMA1	Infineon Technologies, N-Channel 950V 2A (Tc) 22W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	BSC020N03LSGATMA1	Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	STD5N60M2	STMicroelectronics, N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
	SIR638DP-T1-GE3	Vishay Siliconix, N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	TK560P65Y,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV	View
	FDD16AN08A0	ON Semiconductor, N-Channel 75V 9A (Ta), 50A (Tc) 135W (Tc) Surface Mount DPAK, UltraFET™	View
	STF30N10F7	STMicroelectronics, N-Channel 100V 24A (Tc) 25W (Tc) Through Hole TO-220FP, DeepGATE™, STripFET™ VII	View
	FQPF85N06	ON Semiconductor, N-Channel 60V 53A (Tc) 62W (Tc) Through Hole TO-220F, QFET®	View
	BSS119NH6327XTSA1	Infineon Technologies, N-Channel 100V 190mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	BSC010N04LSTATMA1	Infineon Technologies, N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL, OptiMOS™	View

SQ1464EEH-T1_GE3 - Tags

SQ1464EEH-T1_GE3 SQ1464EEH-T1_GE3 PDF SQ1464EEH-T1_GE3 datasheet SQ1464EEH-T1_GE3 specification SQ1464EEH-T1_GE3 image SQ1464EEH-T1_GE3 India Renesas Electronics India SQ1464EEH-T1_GE3 buy SQ1464EEH-T1_GE3 SQ1464EEH-T1_GE3 price SQ1464EEH-T1_GE3 distributor SQ1464EEH-T1_GE3 supplier SQ1464EEH-T1_GE3 wholesales