SUD19P06-60-GE3
SUD19P06-60-GE3
Part Number SUD19P06-60-GE3
Description MOSFET P-CH 60V 18.3A TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak)
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SUD19P06-60-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SUD19P06-60
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 38.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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