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SUD19P06-60-GE3

SUD19P06-60-GE3

Part NumberSUD19P06-60-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 18.3A TO-252

DatasheetSUD19P06-60

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak)

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SUD19P06-60-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SUD19P06-60
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 38.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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SUD19P06-60-GE3 - Tags

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