Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2319DS-T1-GE3

SI2319DS-T1-GE3

SI2319DS-T1-GE3

Part NumberSI2319DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 2.3A SOT23-3

DatasheetSI2319DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount

To learn about the specification of SI2319DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2319DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2319DS-T1-GE3.
We are offering SI2319DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2319DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2319DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 20V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2319DS-T1-GE3 - Related Products

	IXTQ52P10P	IXYS, P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-3P, PolarP™	View
	SQ2319ADS-T1_GE3	Vishay Siliconix, P-Channel 40V 4.6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	NTHS4101PT1G	ON Semiconductor, P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™,	View
	DMP4050SSS-13	Diodes Incorporated, P-Channel 40V 4.4A (Ta) 1.56W (Ta) Surface Mount 8-SO,	View
	TSM2301ACX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 2.8A (Tc) 700mW (Ta) Surface Mount SOT-23,	View
	FDN342P	ON Semiconductor, P-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	TPH1R712MD,L1Q	Toshiba Semiconductor and Storage, P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVI	View
	DMP1022UFDF-7	Diodes Incorporated, P-Channel 12V 9.5A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	TSM2307CX RFG	Taiwan Semiconductor Corporation, P-Channel 30V 3A (Tc) 1.25W (Ta) Surface Mount SOT-23,	View
	BSV236SPH6327XTSA1	Infineon Technologies, P-Channel 20V 1.5A (Ta) 560mW (Ta) Surface Mount PG-SOT363-6, OptiMOS™	View
	SISS65DN-T1-GE3	Vishay Siliconix, P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen III	View
	DMP3008SFGQ-7	Diodes Incorporated, P-Channel 30V 8.6A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8,	View

SI2319DS-T1-GE3 - Tags

SI2319DS-T1-GE3 SI2319DS-T1-GE3 PDF SI2319DS-T1-GE3 datasheet SI2319DS-T1-GE3 specification SI2319DS-T1-GE3 image SI2319DS-T1-GE3 India Renesas Electronics India SI2319DS-T1-GE3 buy SI2319DS-T1-GE3 SI2319DS-T1-GE3 price SI2319DS-T1-GE3 distributor SI2319DS-T1-GE3 supplier SI2319DS-T1-GE3 wholesales