FDMC2610
FDMC2610
Part Number FDMC2610 Description MOSFET N-CH 200V 2.2A POWER33-8 Package / Case 8-PowerWDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
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FDMC2610 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDMC2610 Standard Package 1 Manufacturer ON Semiconductor Series UniFET™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta), 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 200mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 100V FET Feature - Power Dissipation (Max) 2.1W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3) Package / Case 8-PowerWDFN
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PSMN7R6-60BS,118 Nexperia USA Inc., N-Channel 60V 92A (Tc) 149W (Tc) Surface Mount D2PAK,
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IPD80R1K4CEATMA1 Infineon Technologies, N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™
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STB55NF06LT4 STMicroelectronics, N-Channel 60V 55A (Tc) 95W (Tc) Surface Mount D2PAK, STripFET™ II
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SUM60N10-17-E3 Vishay Siliconix, N-Channel 100V 60A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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FDMT80040DC ON Semiconductor, N-Channel 40V 420A (Tc) 156W (Tc) Surface Mount 8-PQFN (8x8),
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APT18M80B Microsemi Corporation, N-Channel 800V 19A (Tc) 500W (Tc) Through Hole TO-247 [B], POWER MOS 8™
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IPW60R040C7XKSA1 Infineon Technologies, N-Channel 600V 50A (Tc) 227W (Tc) Through Hole PG-TO247-3, CoolMOS™ C7
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SUG90090E-GE3 Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®
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