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FDMC2610

FDMC2610

Part NumberFDMC2610

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 2.2A POWER33-8

DatasheetFDMC2610

Package / Case8-PowerWDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)

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FDMC2610 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDMC2610
Standard Package	1
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	200mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	960pF @ 100V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP (3.3x3.3)
Package / Case	8-PowerWDFN

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