STY112N65M5
STY112N65M5
Part Number STY112N65M5 Description MOSFET N-CH 650V 93A MAX247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 96A (Tc) 625W (Tc) Through Hole MAX247™
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STY112N65M5 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STY112N65M5 Standard Package 30 Manufacturer STMicroelectronics Series MDmesh™ V Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22mOhm @ 47A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 16870pF @ 100V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3
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