Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ STU6N65M2

STU6N65M2

STU6N65M2

Part NumberSTU6N65M2

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 650V 4A IPAK

DatasheetST(F,P,U)6N65M2

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251)

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STU6N65M2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	ST(F,P,U)6N65M2
Standard Package	75
Manufacturer	STMicroelectronics
Series	MDmesh™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.8nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	226pF @ 100V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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