IPT60R080G7XTMA1
IPT60R080G7XTMA1
Part Number IPT60R080G7XTMA1 Description MOSFET N-CH 650V 29A HSOF-8 Package / Case 8-PowerSFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 29A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-2
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IPT60R080G7XTMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPT60R080G7 Standard Package 2000 Manufacturer Infineon Technologies Series CoolMOS™ G7 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 400V FET Feature - Power Dissipation (Max) 167W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-2 Package / Case 8-PowerSFN
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