STLD125N4F6AG

Part NumberSTLD125N4F6AG

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STLD125N4F6AG
Standard Package	1
Manufacturer	STMicroelectronics
Series	STripFET™ F6
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Rds On (Max) @ Id, Vgs	3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5600pF @ 10V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerFlat™ (5x6) Dual Side
Package / Case	8-PowerWDFN

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NTMFS6H800NT1G	ON Semiconductor, N-Channel 80V 28A (Ta), 203A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
IPDD60R050G7XTMA1	Infineon Technologies, N-Channel 600V 47A (Tc) 278W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
IRFU120NPBF	Infineon Technologies, N-Channel 100V 9.4A (Tc) 48W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
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SISS30DN-T1-GE3	Vishay Siliconix, N-Channel 80V 15.9A (Ta), 54.7A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
SIHH100N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8,	View
TSM80N950CI C0G	Taiwan Semiconductor Corporation, N-Channel 800V 6A (Tc) 25W (Tc) Through Hole ITO-220AB,	View
IXFT220N20X3HV	IXYS, N-Channel 200V 220A (Tc) 960W (Tc) Surface Mount TO-268HV, HiPerFET™	View

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