Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR606DP-T1-GE3

SIR606DP-T1-GE3

SIR606DP-T1-GE3

Part NumberSIR606DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 37A POWERPAKSO

DatasheetSIR606DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR606DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR606DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR606DP-T1-GE3.
We are offering SIR606DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR606DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR606DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 6V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1360pF @ 50V
FET Feature	-
Power Dissipation (Max)	44.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR606DP-T1-GE3 - Related Products

	SIRA32DP-T1-RE3	Vishay Siliconix, N-Channel 25V 60A (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STU2N95K5	STMicroelectronics, N-Channel 950V 2A (Tc) 45W (Tc) Through Hole IPAK (TO-251), SuperMESH5™	View
	STP120N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI	View
	DMN26D0UFB4-7	Diodes Incorporated, N-Channel 20V 230mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3,	View
	STB75NF20	STMicroelectronics, N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK, STripFET™	View
	CSD16411Q3	Texas Instruments, N-Channel 25V 14A (Ta), 56A (Tc) 2.7W (Ta) Surface Mount 8-VSON (3.3x3.3), NexFET™	View
	PSMN2R0-30YLDX	Nexperia USA Inc., N-Channel 30V 100A (Tc) 142W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FDD3670	ON Semiconductor, N-Channel 100V 34A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252, PowerTrench®	View
	IXFK140N30P	IXYS, N-Channel 300V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, PolarP2™	View
	CSD16327Q3	Texas Instruments, N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	SSM3K16CT,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSIV	View
	SISH108DN-T1-GE3	Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH, TrenchFET® Gen II	View

SIR606DP-T1-GE3 - Tags

SIR606DP-T1-GE3 SIR606DP-T1-GE3 PDF SIR606DP-T1-GE3 datasheet SIR606DP-T1-GE3 specification SIR606DP-T1-GE3 image SIR606DP-T1-GE3 India Renesas Electronics India SIR606DP-T1-GE3 buy SIR606DP-T1-GE3 SIR606DP-T1-GE3 price SIR606DP-T1-GE3 distributor SIR606DP-T1-GE3 supplier SIR606DP-T1-GE3 wholesales