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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH410N4F7-2AG, STH410N4F7-6AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ F7
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V
FET Feature -
Power Dissipation (Max) 365W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FCPF190N60
ON Semiconductor, N-Channel 600V 20.2A (Tc) 39W (Tc) Through Hole TO-220F, SuperFET® II
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DMN2230UQ-7
Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23,
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FDMC2D8N025S
ON Semiconductor, N-Channel 25V 124A (Tc) 47W (Tc) Surface Mount Power33,
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BUK7E1R9-40E,127
Nexperia USA Inc., N-Channel 40V 120A (Tc) 324W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™
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FCA22N60N
ON Semiconductor, N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-3PN, SupreMOS™
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IRFP048RPBF
Vishay Siliconix, N-Channel 60V 70A (Tc) 190W (Tc) Through Hole TO-247-3,
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RSE002N06TL
Rohm Semiconductor, N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount EMT3,
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SIHP30N60AEL-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Through Hole TO-220AB, EL
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STP16NF06
STMicroelectronics, N-Channel 60V 16A (Tc) 45W (Tc) Through Hole TO-220AB, STripFET™ II
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BSC090N03LSGATMA1
Infineon Technologies, N-Channel 30V 13A (Ta), 48A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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IRFB9N60APBF
Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB,
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BSZ0506NSATMA1
Infineon Technologies, N-Channel 30V 15A (Ta), 40A (Tc) 2.1W (Ta), 27W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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