STFW3N170
STFW3N170
Part Number STFW3N170 Description MOSFET N-CH 1700V 2.6A Package / Case ISOWATT218FXUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole ISOWATT-218FX
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STFW3N170 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STFW3N170 Standard Package 30 Manufacturer STMicroelectronics Series PowerMESH™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V FET Feature - Power Dissipation (Max) 63W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOWATT-218FX Package / Case ISOWATT218FX
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