STFW3N170
STFW3N170
Part Number STFW3N170
Description MOSFET N-CH 1700V 2.6A
Package / Case ISOWATT218FX
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole ISOWATT-218FX
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STFW3N170 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STFW3N170
Standard Package 30
Manufacturer STMicroelectronics
Series PowerMESH™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOWATT-218FX
Package / Case ISOWATT218FX
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