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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR9N20DPbF, IRFU9N20DPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak),
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Rohm Semiconductor, N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-247,
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