SI8824EDB-T2-E1
SI8824EDB-T2-E1
Part Number SI8824EDB-T2-E1
Description MOSFET N-CH 20V 2.1A MICROFOOT
Package / Case 4-XFBGA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
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SI8824EDB-T2-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8824EDB
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 75mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA
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