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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPW60R055CFD7XKSA1
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ON Semiconductor, N-Channel 20V 600mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®
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SQJ158EP-T1_GE3
Vishay Siliconix, N-Channel 60V 23A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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IRLHS6342TRPBF
Infineon Technologies, N-Channel 30V 8.7A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2), HEXFET®
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