Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM6J214FE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666

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DMP1200UFR4-7	Diodes Incorporated, P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3,	View
RRF015P03TL	Rohm Semiconductor, P-Channel 30V 1.5A (Ta) 320mW (Ta) Surface Mount TUMT3,	View
FDS6679AZ	ON Semiconductor, P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
FDC642P	ON Semiconductor, P-Channel 20V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
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IRFR9310TRLPBF	Vishay Siliconix, P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak,	View
NTR3A052PZT1G	ON Semiconductor, P-Channel 20V 3.6A (Ta) 860mW (Ta) Surface Mount SOT-23 (TO-236AB),	View

SSM6J214FE(TE85L,F

Part NumberSSM6J214FE(TE85L,F