Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3J168F
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	82pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	S-Mini
Package / Case	TO-236-3, SC-59, SOT-23-3

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SSM3J168F,LF

Part NumberSSM3J168F,LF