SQS407ENW-T1_GE3
SQS407ENW-T1_GE3
Part Number SQS407ENW-T1_GE3
Description MOSFET P-CH 30V PPAK 1212-8W
Package / Case PowerPAK® 1212-8W
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W
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SQS407ENW-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQS407ENW
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4572pF @ 20V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8W
Package / Case PowerPAK® 1212-8W
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