SQS407ENW-T1_GE3
SQS407ENW-T1_GE3
Part Number SQS407ENW-T1_GE3 Description MOSFET P-CH 30V PPAK 1212-8W Package / Case PowerPAK® 1212-8WUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W
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SQS407ENW-T1_GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQS407ENW Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.8mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4572pF @ 20V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8W Package / Case PowerPAK® 1212-8W
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