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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120P10_10M1L Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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STL8P4LLF6 STMicroelectronics, P-Channel 40V 2.9W (Ta) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ F6
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BUK6Y15-40PX Nexperia USA Inc., P-Channel 40V 63A (Ta) 106W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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RRR030P03TL Rohm Semiconductor, P-Channel 30V 3A (Ta) 1W (Ta) Surface Mount TSMT3,
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IRFI9640GPBF Vishay Siliconix, P-Channel 200V 6.1A (Tc) 40W (Tc) Through Hole TO-220-3,
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IXTA96P085TTRL IXYS, P-Channel 85V 96A (Tc) 298W (Tc) Surface Mount TO-263 (IXTA), TrenchP™
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SI2307CDS-T1-E3 Vishay Siliconix, P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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NX2301P,215 Nexperia USA Inc., P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™
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