SI8429DB-T1-E1
SI8429DB-T1-E1
Part Number SI8429DB-T1-E1
Description MOSFET P-CH 8V 11.7A 2X2 4-MFP
Package / Case 4-XFBGA, CSPBGA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
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SI8429DB-T1-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8429DB
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 4V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
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