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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB43N65M5
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI4116DY-T1-GE3
Vishay Siliconix, N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
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IRFU420APBF
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SIR668DP-T1-RE3
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AUIRFS3107TRL
Infineon Technologies, N-Channel 75V 195A (Tc) 370W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, HEXFET®
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DMNH6008SPSQ-13
Diodes Incorporated, N-Channel 60V 16.5A (Ta), 88A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101
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BUK7Y07-30B,115
Nexperia USA Inc., N-Channel 30V 75A (Tc) 105W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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SIRA28BDP-T1-GE3
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2N7002K
ON Semiconductor, N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23 (TO-236AB),
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IRFH3707TRPBF
Infineon Technologies, N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3), HEXFET®
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CSD18537NQ5AT
Texas Instruments, N-Channel 60V 50A (Ta) 3.2W (Ta), 75W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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IPA60R190C6XKSA1
Infineon Technologies, N-Channel 600V 20.2A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™
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SIHP120N60E-GE3
Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Through Hole TO-220AB,
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