IPD80R1K4CEATMA1
IPD80R1K4CEATMA1
Part Number IPD80R1K4CEATMA1 Description MOSFET N-CH 800V 3.9A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD80R1K4CEATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R1K4CEATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R1K4CEATMA1.
We are offering IPD80R1K4CEATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD80R1K4CEATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx80R1K4CE Standard Package 2500 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V FET Feature - Power Dissipation (Max) 63W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD80R1K4CEATMA1 - Related ProductsMore >>
SPW47N60C3FKSA1 Infineon Technologies, N-Channel 650V 47A (Tc) 415W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
SUM80090E-GE3 Vishay Siliconix, N-Channel 150V 128A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®
View
IRL3713STRLPBF Infineon Technologies, N-Channel 30V 260A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®
View
FDPF18N20FT ON Semiconductor, N-Channel 200V 18A (Tc) 41W (Tc) Through Hole TO-220F, UniFET™
View
CPH3456-TL-W ON Semiconductor, N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount 3-CPH,
View
SQD50N04-5M6_GE3 Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
View
PSMN5R5-60YS,115 Nexperia USA Inc., N-Channel 60V 100A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,
View
SI4850EY-T1-E3 Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®
View
STD35NF06LT4 STMicroelectronics, N-Channel 60V 35A (Tc) 80W (Tc) Surface Mount DPAK, STripFET™ II
View
FK4B01110L1 Panasonic Electronic Components, N-Channel 12V 2.3A (Ta) 340mW (Ta) Surface Mount ALGA004-W-0606-RA01,
View
SI4430BDY-T1-GE3 Vishay Siliconix, N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
View
IXFQ72N20X3 IXYS, N-Channel 200V 72A (Tc) 320W (Tc) Through Hole TO-3P, HiPerFET™
View
IPD80R1K4CEATMA1 - Tags
English
