SQD25N06-22L_T4GE3
SQD25N06-22L_T4GE3
Part Number SQD25N06-22L_T4GE3 Description MOSFET N-CH 60V 25A TO252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 25A (Tc) 62W (Tc) Surface Mount TO-252AA
To learn about the specification of SQD25N06-22L_T4GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD25N06-22L_T4GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD25N06-22L_T4GE3.
We are offering SQD25N06-22L_T4GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQD25N06-22L_T4GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD25N06-22L Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 25V FET Feature - Power Dissipation (Max) 62W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQD25N06-22L_T4GE3 - Related ProductsMore >>
IRLU120NPBF Infineon Technologies, N-Channel 100V 10A (Tc) 48W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
PSMN034-100BS,118 Nexperia USA Inc., N-Channel 100V 32A (Tc) 86W (Tc) Surface Mount D2PAK,
View
FQD12N20TM ON Semiconductor, N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak, QFET®
View
IXFQ90N20X3 IXYS, N-Channel 200V 90A (Tc) 390W (Tc) Through Hole TO-3P, HiPerFET™
View
RS1E240BNTB Rohm Semiconductor, N-Channel 30V 24A (Ta) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP,
View
IPC100N04S51R2ATMA1 Infineon Technologies, N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™
View
NTD3055L104T4G ON Semiconductor, N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK,
View
IRLD014PBF Vishay Siliconix, N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
View
IRFR2405TRPBF Infineon Technologies, N-Channel 55V 56A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
APT34F60B Microsemi Corporation, N-Channel 600V 36A (Tc) 624W (Tc) Through Hole TO-247 [B],
View
DMN6040SVT-7 Diodes Incorporated, N-Channel 60V 5A (Ta) 1.2W (Ta) Surface Mount TSOT-26,
View
FDBL0110N60 ON Semiconductor, N-Channel 60V 300A (Tc) 429W (Tj) Surface Mount 8-HPSOF, PowerTrench®
View
SQD25N06-22L_T4GE3 - Tags
English
