Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQD19P06-60L_GE3

SQD19P06-60L_GE3

SQD19P06-60L_GE3

Part NumberSQD19P06-60L_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 20A TO252

DatasheetSQD19P06-60L

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 20A (Tc) 46W (Tc) Surface Mount

To learn about the specification of SQD19P06-60L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD19P06-60L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD19P06-60L_GE3.
We are offering SQD19P06-60L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQD19P06-60L_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQD19P06-60L
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1490pF @ 25V
FET Feature	-
Power Dissipation (Max)	46W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SQD19P06-60L_GE3 - Related Products

	NTGS3441T1G	ON Semiconductor, P-Channel 20V 1.65A (Ta) 500mW (Ta) Surface Mount 6-TSOP,	View
	FDMS6681Z	ON Semiconductor, P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SI4447DY-T1-GE3	Vishay Siliconix, P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IPD90P04P4L04ATMA1	Infineon Technologies, P-Channel 40V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	NTLUS3A18PZTCG	ON Semiconductor, P-Channel 20V 5.1A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2),	View
	IRF5210LPBF	Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262, HEXFET®	View
	DMP2021UFDE-7	Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	IXTP24P085T	IXYS, P-Channel 85V 24A (Tc) 83W (Tc) Through Hole TO-220AB, TrenchP™	View
	IRFR9020PBF	Vishay Siliconix, P-Channel 50V 9.9A (Tc) 42W (Tc) Surface Mount D-Pak,	View
	DMP1200UFR4-7	Diodes Incorporated, P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3,	View
	NVMFS5A160PLZWFT1G	ON Semiconductor, P-Channel 60V 15A (Ta), 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	RZE002P02TL	Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3,	View

SQD19P06-60L_GE3 - Tags

SQD19P06-60L_GE3 SQD19P06-60L_GE3 PDF SQD19P06-60L_GE3 datasheet SQD19P06-60L_GE3 specification SQD19P06-60L_GE3 image SQD19P06-60L_GE3 India Renesas Electronics India SQD19P06-60L_GE3 buy SQD19P06-60L_GE3 SQD19P06-60L_GE3 price SQD19P06-60L_GE3 distributor SQD19P06-60L_GE3 supplier SQD19P06-60L_GE3 wholesales