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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD19P06-60L
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
NTGS3441T1G
ON Semiconductor, P-Channel 20V 1.65A (Ta) 500mW (Ta) Surface Mount 6-TSOP,
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FDMS6681Z
ON Semiconductor, P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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SI4447DY-T1-GE3
Vishay Siliconix, P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO, TrenchFET®
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IPD90P04P4L04ATMA1
Infineon Technologies, P-Channel 40V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™
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NTLUS3A18PZTCG
ON Semiconductor, P-Channel 20V 5.1A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2),
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IRF5210LPBF
Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262, HEXFET®
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DMP2021UFDE-7
Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),
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IXTP24P085T
IXYS, P-Channel 85V 24A (Tc) 83W (Tc) Through Hole TO-220AB, TrenchP™
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IRFR9020PBF
Vishay Siliconix, P-Channel 50V 9.9A (Tc) 42W (Tc) Surface Mount D-Pak,
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DMP1200UFR4-7
Diodes Incorporated, P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3,
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NVMFS5A160PLZWFT1G
ON Semiconductor, P-Channel 60V 15A (Ta), 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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RZE002P02TL
Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3,
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