Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3J325F
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	150mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	S-Mini
Package / Case	TO-236-3, SC-59, SOT-23-3

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SI6423DQ-T1-GE3	Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View

SSM3J325F,LF

Part NumberSSM3J325F,LF