SQD100N03-3M2L_GE3
SQD100N03-3M2L_GE3
Part Number SQD100N03-3M2L_GE3
Description MOSFET N-CH 30V 100A TO252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA
To learn about the specification of SQD100N03-3M2L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD100N03-3M2L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD100N03-3M2L_GE3.
We are offering SQD100N03-3M2L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQD100N03-3M2L_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD100N03-3M2L
Standard Package 2000
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6316pF @ 15V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQD100N03-3M2L_GE3 - Related ProductsMore >>
IXFH21N50
IXYS, N-Channel 500V 21A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
View
RJK0305DPB-02#J0
Renesas Electronics America, N-Channel 30V 30A (Ta) Surface Mount LFPAK,
View
MCB150N06YB-TP
Micro Commercial Co, N-Channel 60V 150A (Tc) 187W (Tc) Surface Mount D2PAK,
View
IRFL014NTRPBF
Infineon Technologies, N-Channel 55V 1.9A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
IXFX64N60P3
IXYS, N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3, HiPerFET™, Polar3™
View
IRF3205PBF
Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
FDC2512
ON Semiconductor, N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
IRFI820GPBF
Vishay Siliconix, N-Channel 500V 2.1A (Tc) 30W (Tc) Through Hole TO-220-3,
View
SIE864DF-T1-GE3
Vishay Siliconix, N-Channel 30V 45A (Tc) 5.2W (Ta), 25W (Tc) Surface Mount 10-PolarPAK® (U), TrenchFET®
View
TK6R7P06PL,RQ
Toshiba Semiconductor and Storage, N-Channel 60V 46A (Tc) 66W (Tc) Surface Mount DPAK, U-MOSIX-H
View
STY145N65M5
STMicroelectronics, N-Channel 650V 138A (Tc) 625W (Tc) Through Hole MAX247™, MDmesh™ V
View
NTR4003NT1G
ON Semiconductor, N-Channel 30V 500mA (Ta) 690mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SQD100N03-3M2L_GE3 - Tags