SQD100N03-3M2L_GE3


SQD100N03-3M2L_GE3

Part NumberSQD100N03-3M2L_GE3

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SQD100N03-3M2L_GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2000
ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs116nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6316pF @ 15V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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SQD100N03-3M2L_GE3 - Tags

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