SIA456DJ-T1-GE3
SIA456DJ-T1-GE3
Part Number SIA456DJ-T1-GE3 Description MOSFET N-CH 200V 2.6A SC70-6 Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
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SIA456DJ-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA456DJ Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 1.38Ohm @ 750mA, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 100V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
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