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SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

Part NumberSIA456DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 2.6A SC70-6

DatasheetSIA456DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

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SIA456DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA456DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 100V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

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