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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ4182EY
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 15V
FET Feature -
Power Dissipation (Max) 7.1W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
IRFR210TRRPBF
Vishay Siliconix, N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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FDP75N08A
ON Semiconductor, N-Channel 75V 75A (Tc) 137W (Tc) Through Hole TO-220-3, UniFET™
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BSS138K-13
Diodes Incorporated, N-Channel 50V 310mA (Ta) 380mW (Ta) Surface Mount SOT-23,
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STP34NM60ND
STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II
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IRFBC40ASTRLPBF
Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D2PAK,
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BUK963R2-40B,118
Nexperia USA Inc., N-Channel 40V 100A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IPP093N06N3GXKSA1
Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Through Hole PG-TO220-3, OptiMOS™
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STD2NK90Z-1
STMicroelectronics, N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole I-PAK, SuperMESH™
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SIR606DP-T1-GE3
Vishay Siliconix, N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IRFBE20PBF
Vishay Siliconix, N-Channel 800V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB,
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AOSP32314
Alpha & Omega Semiconductor Inc., N-Channel 30V 14.5A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
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FQB34N20TM-AM002
ON Semiconductor, N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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