Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

Part NumberSQ2364EES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V SOT-23

DatasheetSQ2364EES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2364EES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2364EES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2364EES-T1_GE3.
We are offering SQ2364EES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2364EES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2364EES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2364EES-T1_GE3 - Related Products

	IRFU024PBF	Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,	View
	STF14NM50N	STMicroelectronics, N-Channel 500V 12A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II	View
	FQD4N20TM	ON Semiconductor, N-Channel 200V 3A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount D-Pak, QFET®	View
	IRL630STRLPBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
	FDMC86520L	ON Semiconductor, N-Channel 60V 13.5A (Ta), 22A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	IPN80R600P7ATMA1	Infineon Technologies, N-Channel 800V 8A (Tc) 7.4W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	IPA60R460CEXKSA1	Infineon Technologies, N-Channel 600V 9.1A (Tc) 30W (Tc) Through Hole PG-TO220-FP, CoolMOS™ CE	View
	DMG4468LK3-13	Diodes Incorporated, N-Channel 30V 9.7A (Ta) 1.68W (Ta) Surface Mount TO-252-3,	View
	BSC16DN25NS3GATMA1	Infineon Technologies, N-Channel 250V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	NTD3055-150T4G	ON Semiconductor, N-Channel 60V 9A (Ta) 1.5W (Ta), 28.8W (Tj) Surface Mount DPAK,	View
	BSB056N10NN3GXUMA1	Infineon Technologies, N-Channel 100V 9A (Ta), 83A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™, OptiMOS™	View
	STD30NF06LT4	STMicroelectronics, N-Channel 60V 35A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™	View

SQ2364EES-T1_GE3 - Tags

SQ2364EES-T1_GE3 SQ2364EES-T1_GE3 PDF SQ2364EES-T1_GE3 datasheet SQ2364EES-T1_GE3 specification SQ2364EES-T1_GE3 image SQ2364EES-T1_GE3 India Renesas Electronics India SQ2364EES-T1_GE3 buy SQ2364EES-T1_GE3 SQ2364EES-T1_GE3 price SQ2364EES-T1_GE3 distributor SQ2364EES-T1_GE3 supplier SQ2364EES-T1_GE3 wholesales