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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2361AEES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TA)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
FJ4B01110L1
Panasonic Electronic Components, P-Channel 12V 1.4A (Ta) 340mW (Ta) Surface Mount ALGA004-W-0606-RA01,
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IXTA76P10T
IXYS, P-Channel 100V 76A (Tc) 298W (Tc) Surface Mount TO-263 (IXTA), TrenchP™
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VP0106N3-G
Microchip Technology, P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,
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SI8401DB-T1-E1
Vishay Siliconix, P-Channel 20V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®
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FQD8P10TM-F085
ON Semiconductor, P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak, Automotive, AEC-Q101
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AUIRFR5305
Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
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TPN4R712MD,L1Q
Toshiba Semiconductor and Storage, P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVI
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DMP4047SK3-13
Diodes Incorporated, P-Channel 40V 20A (Tc) 1.6W (Ta) Surface Mount TO-252,
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IPD50P04P4L11ATMA1
Infineon Technologies, P-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™
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FQT3P20TF
ON Semiconductor, P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4, QFET®
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FDN302P
ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
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SI7149ADP-T1-GE3
Vishay Siliconix, P-Channel 30V 50A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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