Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

Part NumberSQ2309ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 60V SOT23

DatasheetSQ2309ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.7A (Tc) 2W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2309ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2309ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2309ES-T1_GE3.
We are offering SQ2309ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2309ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2309ES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2309ES-T1_GE3 - Related Products

	BSH202,215	Nexperia USA Inc., P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	NX2301P,215	Nexperia USA Inc., P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	NVC3S5A51PLZT1G	ON Semiconductor, P-Channel 60V 1.8A (Ta) 1.2W (Ta) Surface Mount 3-CPH,	View
	IPD80P03P4L07ATMA1	Infineon Technologies, P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	NTMS4177PR2G	ON Semiconductor, P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC,	View
	TPC6111(TE85L,F,M)	Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8), U-MOSV	View
	SUM110P06-08L-E3	Vishay Siliconix, P-Channel 60V 110A (Tc) 3.75W (Ta), 272W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	MCH6353-TL-W	ON Semiconductor, P-Channel 12V 6A (Ta) 1.4W (Ta) Surface Mount 6-MCPH,	View
	IRF6216TRPBF	Infineon Technologies, P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	AOD403	Alpha & Omega Semiconductor Inc., P-Channel 30V 15A (Ta), 70A (Tc) 2.5W (Ta), 90W (Tc) Surface Mount TO-252, (D-Pak),	View
	FDS4685	ON Semiconductor, P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IRFR9024TRLPBF	Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View

SQ2309ES-T1_GE3 - Tags

SQ2309ES-T1_GE3 SQ2309ES-T1_GE3 PDF SQ2309ES-T1_GE3 datasheet SQ2309ES-T1_GE3 specification SQ2309ES-T1_GE3 image SQ2309ES-T1_GE3 India Renesas Electronics India SQ2309ES-T1_GE3 buy SQ2309ES-T1_GE3 SQ2309ES-T1_GE3 price SQ2309ES-T1_GE3 distributor SQ2309ES-T1_GE3 supplier SQ2309ES-T1_GE3 wholesales