SI8487DB-T1-E1
SI8487DB-T1-E1
Part Number SI8487DB-T1-E1 Description MOSFET P-CH 30V MICROFOOT Package / Case 4-UFBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
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SI8487DB-T1-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8487DB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 31mOhm @ 2A, 10V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V FET Feature - Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-UFBGA
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