Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR638DP-T1-GE3

SIR638DP-T1-GE3

SIR638DP-T1-GE3

Part NumberSIR638DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 100A PPAK SO-8

DatasheetSiR638DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR638DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR638DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR638DP-T1-GE3.
We are offering SIR638DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR638DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR638DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	204nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	10500pF @ 20V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR638DP-T1-GE3 - Related Products

	STD6N60M2	STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
	IRFIB7N50APBF	Vishay Siliconix, N-Channel 500V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3,	View
	IRFPF50PBF	Vishay Siliconix, N-Channel 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3,	View
	IAUC120N04S6N009ATMA1	Infineon Technologies, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-33, Automotive, AEC-Q101, OptiMOS™	View
	STE145N65M5	STMicroelectronics, N-Channel 650V 143A (Tc) 679W (Tc) Chassis Mount ISOTOP®, MDmesh™ V	View
	FDMS8023S	ON Semiconductor, N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	RJK0651DPB-00#J5	Renesas Electronics America, N-Channel 60V 25A (Ta) 45W (Tc) Surface Mount LFPAK,	View
	STF2N62K3	STMicroelectronics, N-Channel 620V 2.2A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH3™	View
	RSH070N05GZETB	Rohm Semiconductor, N-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	SQM30010EL_GE3	Vishay Siliconix, N-Channel 30V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	IRL60HS118	Infineon Technologies, N-Channel 60V 18.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2),	View
	PMZ390UN,315	Nexperia USA Inc., N-Channel 30V 1.78A (Tc) 2.5W (Tc) Surface Mount DFN1006-3, TrenchMOS™	View

SIR638DP-T1-GE3 - Tags

SIR638DP-T1-GE3 SIR638DP-T1-GE3 PDF SIR638DP-T1-GE3 datasheet SIR638DP-T1-GE3 specification SIR638DP-T1-GE3 image SIR638DP-T1-GE3 India Renesas Electronics India SIR638DP-T1-GE3 buy SIR638DP-T1-GE3 SIR638DP-T1-GE3 price SIR638DP-T1-GE3 distributor SIR638DP-T1-GE3 supplier SIR638DP-T1-GE3 wholesales