Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR638DP-T1-GE3

SIR638DP-T1-GE3

SIR638DP-T1-GE3

Part NumberSIR638DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 100A PPAK SO-8

DatasheetSiR638DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR638DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR638DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR638DP-T1-GE3.
We are offering SIR638DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR638DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR638DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	204nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	10500pF @ 20V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR638DP-T1-GE3 - Related Products

	SIUD406ED-T1-GE3	Vishay Siliconix, N-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET®	View
	BUK7E2R6-60E,127	Nexperia USA Inc., N-Channel 60V 120A (Tc) 349W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STW12NK90Z	STMicroelectronics, N-Channel 900V 11A (Tc) 230W (Tc) Through Hole TO-247-3, SuperMESH™	View
	BSS806NH6327XTSA1	Infineon Technologies, N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	SI3464DV-T1-GE3	Vishay Siliconix, N-Channel 20V 8A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	TSM60NB190CZ C0G	Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 33.8W (Tc) Through Hole TO-220,	View
	SIS782DN-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 41W (Tc) Surface Mount PowerPAK® 1212-8,	View
	SIL08N03-TP	Micro Commercial Co, N-Channel 30V 8A (Tc) 1.6W Surface Mount SOT-23-6L,	View
	RCJ450N20TL	Rohm Semiconductor, N-Channel 200V 45A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,	View
	BSC010NE2LSIATMA1	Infineon Technologies, N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	IRF6795MTRPBF	Infineon Technologies, N-Channel 25V 32A (Ta), 160A (Tc) 2.8W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®	View
	STQ1NK80ZR-AP	STMicroelectronics, N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™	View

SIR638DP-T1-GE3 - Tags

SIR638DP-T1-GE3 SIR638DP-T1-GE3 PDF SIR638DP-T1-GE3 datasheet SIR638DP-T1-GE3 specification SIR638DP-T1-GE3 image SIR638DP-T1-GE3 India Renesas Electronics India SIR638DP-T1-GE3 buy SIR638DP-T1-GE3 SIR638DP-T1-GE3 price SIR638DP-T1-GE3 distributor SIR638DP-T1-GE3 supplier SIR638DP-T1-GE3 wholesales