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SPD18P06PGBTMA1

SPD18P06PGBTMA1

Part NumberSPD18P06PGBTMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 60V 18.6A TO252-3

DatasheetSPD18P06P G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3

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SPD18P06PGBTMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SPD18P06P G
Standard Package	1
Manufacturer	Infineon Technologies
Series	SIPMOS®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 25V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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