SPD08P06PGBTMA1
SPD08P06PGBTMA1
Part Number SPD08P06PGBTMA1
Description MOSFET P-CH 60V 8.83A 3TO252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description P-Channel 60V 8.83A (Ta) 42W (Tc) Surface Mount PG-TO252-3
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SPD08P06PGBTMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPD08P06P G
Standard Package 1
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6.2V
Rds On (Max) @ Id, Vgs 300mOhm @ 10A, 6.2V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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