SPD08P06PGBTMA1
SPD08P06PGBTMA1
Part Number SPD08P06PGBTMA1 Description MOSFET P-CH 60V 8.83A 3TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 8.83A (Ta) 42W (Tc) Surface Mount PG-TO252-3
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SPD08P06PGBTMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPD08P06P G Standard Package 1 Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 8.83A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6.2V Rds On (Max) @ Id, Vgs 300mOhm @ 10A, 6.2V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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