SPB11N60C3ATMA1
SPB11N60C3ATMA1
Part Number SPB11N60C3ATMA1
Description MOSFET N-CH 650V 11A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2
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SPB11N60C3ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPB11N60C3
Standard Package 1000
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Tape & Reel (TR)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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