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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STD15N50M2AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ M2
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 100V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Vishay Siliconix, N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, TrenchFET®
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BSZ035N03MSGATMA1
Infineon Technologies, N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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NTK3043NT1G
ON Semiconductor, N-Channel 20V 210mA (Ta) 310mW (Ta) Surface Mount SOT-723,
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SSM3K336R,LF
Toshiba Semiconductor and Storage, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H
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RD3H200SNFRATL
Rohm Semiconductor, N-Channel 45V 20A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
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IXFP38N30X3M
IXYS, N-Channel 300V 38A (Tc) 34W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™
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IXTP08N50D2
IXYS, N-Channel 500V 800mA (Tc) 60W (Tc) Through Hole TO-220AB,
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STB24N65M2
STMicroelectronics, N-Channel 650V 16A (Tc) 150W (Tc) Surface Mount D2PAK, MDmesh™ M2
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DN2535N3-G
Microchip Technology, N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226),
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IRFB4229PBF
Infineon Technologies, N-Channel 250V 46A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
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IPP093N06N3GXKSA1
Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Through Hole PG-TO220-3, OptiMOS™
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SIA446DJ-T1-GE3
Vishay Siliconix, N-Channel 150V 7.7A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, ThunderFET®
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