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SPB11N60C3ATMA1

SPB11N60C3ATMA1

Part NumberSPB11N60C3ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 11A D2PAK

DatasheetSPB11N60C3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

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SPB11N60C3ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SPB11N60C3
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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