SIZ926DT-T1-GE3


SIZ926DT-T1-GE3

Part NumberSIZ926DT-T1-GE3

Manufacturer

Description

Datasheet

Package / Case8-PowerWDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIZ926DT-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds925pF @ 10V, 2150pF @ 10V
Power - Max20.2W, 40W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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SIZ926DT-T1-GE3 - Tags

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