Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS70DN-T1-GE3

SISS70DN-T1-GE3

SISS70DN-T1-GE3

Part NumberSISS70DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 125V

DatasheetSISS70DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 125V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS70DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS70DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS70DN-T1-GE3.
We are offering SISS70DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS70DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS70DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	125V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	29.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	535pF @ 62.5V
FET Feature	-
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS70DN-T1-GE3 - Related Products

	FCA20N60F	ON Semiconductor, N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-3PN, SuperFET™	View
	TK55S10N1,LQ	Toshiba Semiconductor and Storage, N-Channel 100V 55A (Ta) 157W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	FDN327N	ON Semiconductor, N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	IRLZ34SPBF	Vishay Siliconix, N-Channel 60V 30A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount TO-263 (D²Pak),	View
	IPB60R125CPATMA1	Infineon Technologies, N-Channel 600V 25A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™	View
	SUP40N25-60-E3	Vishay Siliconix, N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®	View
	PSMN025-80YLX	Nexperia USA Inc., N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STD3NK100Z	STMicroelectronics, N-Channel 1000V 2.5A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH™	View
	IPB108N15N3GATMA1	Infineon Technologies, N-Channel 150V 83A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	IPW60R190E6FKSA1	Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	RSJ301N10FRATL	Rohm Semiconductor, N-Channel 100V 30A (Ta) 50W (Ta) Surface Mount LPTS, Automotive, AEC-Q101	View
	STD60NF55LT4	STMicroelectronics, N-Channel 55V 60A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View

SISS70DN-T1-GE3 - Tags

SISS70DN-T1-GE3 SISS70DN-T1-GE3 PDF SISS70DN-T1-GE3 datasheet SISS70DN-T1-GE3 specification SISS70DN-T1-GE3 image SISS70DN-T1-GE3 India Renesas Electronics India SISS70DN-T1-GE3 buy SISS70DN-T1-GE3 SISS70DN-T1-GE3 price SISS70DN-T1-GE3 distributor SISS70DN-T1-GE3 supplier SISS70DN-T1-GE3 wholesales