IPB108N15N3GATMA1
IPB108N15N3GATMA1
Part Number IPB108N15N3GATMA1
Description MOSFET N-CH 150V 83A TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 150V 83A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of IPB108N15N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB108N15N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB108N15N3GATMA1.
We are offering IPB108N15N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB108N15N3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB108N15N3 G,IPx111N15N3 G
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB108N15N3GATMA1 - Related ProductsMore >>
IRFP350PBF
Vishay Siliconix, N-Channel 400V 16A (Tc) 190W (Tc) Through Hole TO-247-3,
View
FDP025N06
ON Semiconductor, N-Channel 60V 120A (Tc) 395W (Tc) Through Hole TO-220-3, PowerTrench®
View
IRFP3306PBF
Infineon Technologies, N-Channel 60V 120A (Tc) 220W (Tc) Through Hole TO-247AC, HEXFET®
View
SQS460EN-T1_GE3
Vishay Siliconix, N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IPB160N04S203ATMA4
Infineon Technologies, N-Channel 40V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
View
STD11N65M2
STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ II Plus
View
FQP34N20
ON Semiconductor, N-Channel 200V 31A (Tc) 180W (Tc) Through Hole TO-220-3, QFET®
View
FDC8884
ON Semiconductor, N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
DMN10H220L-7
Diodes Incorporated, N-Channel 100V 1.4A (Ta) 1.3W (Ta) Surface Mount SOT-23,
View
BSC105N10LSFGATMA1
Infineon Technologies, N-Channel 100V 11.4A (Ta), 90A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
SI7818DN-T1-E3
Vishay Siliconix, N-Channel 150V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SQS850EN-T1_GE3
Vishay Siliconix, N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8,
View
IPB108N15N3GATMA1 - Tags