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SISS61DN-T1-GE3

SISS61DN-T1-GE3

Part NumberSISS61DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V PPAK 1212-8S

DatasheetSISS61DN

Package / CasePowerPAK® 1212-8S

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Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

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SISS61DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS61DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	231nC @ 10V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	8740pF @ 10V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S

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