SISS46DN-T1-GE3
SISS46DN-T1-GE3
Part Number SISS46DN-T1-GE3 Description MOSFET N-CH 100V PPAK 1212-8S Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS46DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS46DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS46DN-T1-GE3.
We are offering SISS46DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS46DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS46DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12.5A (Ta), 45.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 12.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2140pF @ 50V FET Feature - Power Dissipation (Max) 5W (Ta), 65.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS46DN-T1-GE3 - Related ProductsMore >>
NTD3055-150T4G ON Semiconductor, N-Channel 60V 9A (Ta) 1.5W (Ta), 28.8W (Tj) Surface Mount DPAK,
View
2N7002T-TP Micro Commercial Co, N-Channel 60V 115mA 150mW Surface Mount SOT-523,
View
TK58E06N1,S1X Toshiba Semiconductor and Storage, N-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220, U-MOSVIII-H
View
PSMN1R2-25YLC,115 Nexperia USA Inc., N-Channel 25V 100A (Tc) 179W (Tc) Surface Mount LFPAK56, Power-SO8,
View
SI7414DN-T1-GE3 Vishay Siliconix, N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
TSM4N80CI C0G Taiwan Semiconductor Corporation, N-Channel 800V 4A (Tc) 38.7W (Tc) Through Hole ITO-220AB,
View
IRFS7734TRLPBF Infineon Technologies, N-Channel 75V 183A (Tc) 290W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™
View
QS5U17TR Rohm Semiconductor, N-Channel 30V 2A (Ta) 900mW (Ta) Surface Mount TSMT5,
View
SI4456DY-T1-E3 Vishay Siliconix, N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
View
IPAN80R280P7XKSA1 Infineon Technologies, N-Channel 800V 17A (Tc) 30W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
View
SI1012R-T1-GE3 Vishay Siliconix, N-Channel 20V 500mA (Ta) 150mW (Ta) Surface Mount SC-75A, TrenchFET®
View
RFD14N05LSM ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-252AA,
View
SISS46DN-T1-GE3 - Tags
English
