TK5Q60W,S1VQ

Part NumberTK5Q60W,S1VQ

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK5Q60W
Standard Package	75
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	900mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	3.7V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 300V
FET Feature	Super Junction
Power Dissipation (Max)	60W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Stub Leads, IPak

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BSC010NE2LSIATMA1	Infineon Technologies, N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
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