Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS40DN-T1-GE3

SISS40DN-T1-GE3

SISS40DN-T1-GE3

Part NumberSISS40DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 36.5A PPAK 1212

DatasheetSISS40DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 36.5A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS40DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS40DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS40DN-T1-GE3.
We are offering SISS40DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS40DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS40DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	36.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	845pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS40DN-T1-GE3 - Related Products

	IXTX120N65X2	IXYS, N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole PLUS247™-3,	View
	RTR040N03TL	Rohm Semiconductor, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	STD11NM50N	STMicroelectronics, N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II	View
	PSMN069-100YS,115	Nexperia USA Inc., N-Channel 100V 17A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STB60NF06T4	STMicroelectronics, N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2PAK, STripFET™ II	View
	TPW1R306PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance, U-MOSIX-H	View
	BUK7215-55A,118	Nexperia USA Inc., N-Channel 55V 55A (Tc) 115W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	IPP50R380CEXKSA1	Infineon Technologies, N-Channel 500V 9.9A (Tc) 73W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
	IRF2807STRLPBF	Infineon Technologies, N-Channel 75V 82A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	FCD360N65S3R0	ON Semiconductor, N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252), SuperFET® III	View
	DMT10H015LK3-13	Diodes Incorporated, N-Channel 100V 50A (Tc) 2.9W (Ta) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101	View
	TK39J60W,S1VQ	Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N), DTMOSIV	View

SISS40DN-T1-GE3 - Tags

SISS40DN-T1-GE3 SISS40DN-T1-GE3 PDF SISS40DN-T1-GE3 datasheet SISS40DN-T1-GE3 specification SISS40DN-T1-GE3 image SISS40DN-T1-GE3 India Renesas Electronics India SISS40DN-T1-GE3 buy SISS40DN-T1-GE3 SISS40DN-T1-GE3 price SISS40DN-T1-GE3 distributor SISS40DN-T1-GE3 supplier SISS40DN-T1-GE3 wholesales