FQU2N100TU
FQU2N100TU
Part Number FQU2N100TU Description MOSFET N-CH 1000V 1.6A IPAK Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
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FQU2N100TU - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD2N100, FQU2N100 Standard Package 5040 Manufacturer ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9Ohm @ 800mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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