Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS32DN-T1-GE3

SISS32DN-T1-GE3

SISS32DN-T1-GE3

Part NumberSISS32DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 80-V POWERPAK 1212

DatasheetSISS32DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS32DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS32DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS32DN-T1-GE3.
We are offering SISS32DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS32DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS32DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	17.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 40V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS32DN-T1-GE3 - Related Products

	PMPB12UNEX	Nexperia USA Inc., N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6,	View
	IRL3713STRLPBF	Infineon Technologies, N-Channel 30V 260A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®	View
	2N7002LT3G	ON Semiconductor, N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	SQJ422EP-T1_GE3	Vishay Siliconix, N-Channel 40V 74A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	RF4E100AJTCR	Rohm Semiconductor, N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8,	View
	FDD6530A	ON Semiconductor, N-Channel 20V 21A (Ta) 3.3W (Ta), 33W (Tc) Surface Mount TO-252, PowerTrench®	View
	IRLTS6342TRPBF	Infineon Technologies, N-Channel 30V 8.3A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®	View
	TK25N60X,S1F	Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-247, DTMOSIV-H	View
	IXFA4N85X	IXYS, N-Channel 850V 3.5A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™	View
	IRF3710ZSTRLPBF	Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK, HEXFET®	View
	SQJ402EP-T1_GE3	Vishay Siliconix, N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	FDB8896	ON Semiconductor, N-Channel 30V 19A (Ta), 93A (Tc) 80W (Tc) Surface Mount TO-263AB, PowerTrench®	View

SISS32DN-T1-GE3 - Tags

SISS32DN-T1-GE3 SISS32DN-T1-GE3 PDF SISS32DN-T1-GE3 datasheet SISS32DN-T1-GE3 specification SISS32DN-T1-GE3 image SISS32DN-T1-GE3 India Renesas Electronics India SISS32DN-T1-GE3 buy SISS32DN-T1-GE3 SISS32DN-T1-GE3 price SISS32DN-T1-GE3 distributor SISS32DN-T1-GE3 supplier SISS32DN-T1-GE3 wholesales